Title :
High-speed quantum-dot resonant-cavity SACM avalanche photodiodes operating at 1.06 /spl mu/m
Author :
Yuan, P. ; Baklenov, O. ; Nie, H. ; Holmes, A.L. ; Streetman, B.G. ; Campbell, J.C.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
In this paper we describe a resonant-cavity separate absorption, charge and multiplication (SACM) APD structure. Compared to our previous work, the gain has been increased from -18 to >50 and we have measured the frequency response. In the low gain regime, the bandwidth is 35 GHz and at higher gains, where the frequency response is determined by the gain-bandwidth product, we observe a gain-bandwidth product of 220 GHz.
Keywords :
avalanche photodiodes; cavity resonators; quantum well devices; semiconductor device measurement; semiconductor quantum dots; bandwidth; frequency response; gain; gain-bandwidth product; high-speed quantum-dot resonant-cavity SACM avalanche photodiodes; low gain regime; resonant-cavity separate absorption charge and multiplication APD structure; Absorption; Avalanche photodiodes; Bandwidth; Dark current; Frequency response; Indium gallium arsenide; Microelectronics; Photoconductivity; Quantum dots; Resonance;
Conference_Titel :
Device Research Conference Digest, 1999 57th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-5170-3
DOI :
10.1109/DRC.1999.806373
