Title :
200 mm silicon wafer processing for large area strip detectors
Author :
Christophersen, Marc ; Phlips, Bernard F.
Author_Institution :
U.S. Naval Res. Lab., Washington, DC, USA
fDate :
Oct. 24 2009-Nov. 1 2009
Abstract :
We developed large silicon single-sided strip detectors made of 200 mm float-zone Si wafers. The single-sided silicon strip detectors have an effective active area of 156 cm2 and 725 ¿m in thickness and were fully depleted. Basic performance was measured using Am-241 and Co-57 sources. The leakage current varied from strip to strip due to some contaminations during the processing.
Keywords :
elemental semiconductors; leakage currents; semiconductor counters; semiconductor technology; silicon; Am-241 radioactive source; Co-57 radioactive source; Si; float zone silicon wafers; large area strip detectors; leakage current; silicon wafer processing; single sided strip detectors; size 200 mm; Conductivity; Detectors; Fabrication; Laboratories; Lithography; Pediatrics; Pollution measurement; Semiconductor diodes; Silicon; Strips;
Conference_Titel :
Nuclear Science Symposium Conference Record (NSS/MIC), 2009 IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-3961-4
Electronic_ISBN :
1095-7863
DOI :
10.1109/NSSMIC.2009.5402245
