Title :
Chemical interactions and thermoelectric properties on the Bi2Te3-Bi2Se3 section in the interval below 33.3 mole % Bi2Se3
Author :
Sokolov, O.B. ; Skipidarov, S. Ya ; Duvankov, N.I. ; Shabunina, G.G.
Author_Institution :
Nord Specialized Design- Technol. Bur., Moscow, Russia
Abstract :
By methods of differential-thermal analysis and X-ray-phase analysis it is proved that the Bi2Te3-Bi2Se3 section is a system with a continuous series of solid solutions, with the formation of Bi2Te2Se compound below the solidus line. The formation of this compound has been confirmed both in experiment and by thermodynamic analysis. It has been found that after zone melting the temperature values of the liquidus and solidus lines correlate with those obtained for equilibrium systems and mentioned in the literature. The boundary has been identified for the existence of Bi2Te3-xSex solid solutions, which lies at ∼14 mole % Bi2Se3 (Bi2Te2.58Se0.42). Thermodynamic analysis shows chemical interactions (reactions) resulting in the formation of Bi2Te2Se. It has been found that in the two-phase zone, the Seebeck coefficient values dramatically change in a jumping manner, with the points of extremum located on the boundaries of the two-phase zone. In the zone of Bi2Te2Se compound occurrence (33.3 mole % Bi2Se3) the values of the Seebeck coefficient and power factor are minimal.
Keywords :
Seebeck effect; X-ray diffraction; bismuth compounds; differential thermal analysis; phase diagrams; semiconductor materials; thermoelectric power; Bi2Te2.58Se0.42; Bi2Te3-xSex; Bi2Te3-Bi2Se3; Bi2Te3-Bi2Se3 section; Seebeck coefficient; X-ray-phase analysis; chemical interactions; differential-thermal analysis; equilibrium systems; liquidus lines; power factor; solid solutions; solidus line; thermodynamic analysis; thermoelectric properties; two-phase zone; zone melting; Bismuth; Chemicals; Composite materials; Cooling; Probability; Tellurium; Thermodynamics; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 2002. Proceedings ICT '02. Twenty-First International Conference on
Print_ISBN :
0-7803-7683-8
DOI :
10.1109/ICT.2002.1190251