• DocumentCode
    3336988
  • Title

    Impact of dark counts in low-light level silicon photomultiplier multi-readout applications

  • Author

    Castro, I.F. ; Soares, A.J. ; Veloso, J.F.

  • Author_Institution
    Phys. Dept., Univ. of Aveiro, Aveiro, Portugal
  • fYear
    2009
  • fDate
    Oct. 24 2009-Nov. 1 2009
  • Firstpage
    1592
  • Lastpage
    1596
  • Abstract
    The Silicon Photomultiplier (SiPM) generates noise due to thermal excitation, producing dark counts. This may be a critical performance drawback of the SiPM for low light level applications, despite its otherwise promising features such as high internal gain and quantum efficiency, low power consumption and insensitivity to magnetic fields. The dark count rate is highly dependent on temperature and bias voltage, increasing with both. Dark count pulses are similar to single photon interactions and introduce complex challenges in low light level measurements. In applications where the pulse integration time is dependent on the decay time of a slow scintillation counter, the longer the signal integration the higher the probability of dark counts during the integration period, and this can be critical for detecting very low number of photons in that period. For higher light levels, the effects of dark counts can be reduced by setting an appropriate threshold. This work presents Monte Carlo simulation techniques to evaluate the impact of dark counts into position detection algorithms, in low light level imaging applications where multiple SiPMs are used to detect position of interaction.
  • Keywords
    Monte Carlo methods; elemental semiconductors; photomultipliers; position sensitive particle detectors; readout electronics; semiconductor device noise; Monte Carlo simulation; dark count effects; dark count rate; interaction position; low light level SiPM multireadout applications; silicon photomultiplier; thermal excitation induced noise; Energy consumption; Magnetic field measurement; Magnetic noise; Noise generators; Performance gain; Photomultipliers; Pulse measurements; Silicon; Temperature dependence; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record (NSS/MIC), 2009 IEEE
  • Conference_Location
    Orlando, FL
  • ISSN
    1095-7863
  • Print_ISBN
    978-1-4244-3961-4
  • Electronic_ISBN
    1095-7863
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2009.5402252
  • Filename
    5402252