DocumentCode :
3337448
Title :
Electrical and microstructural analyses on the Co-doped FeSi2 prepared by vacuum hot pressing
Author :
Kim, I.-H. ; Ur, S.-C. ; Lee, J.-I.
Author_Institution :
Dept. of Mater. Sci. & Eng., Chungju Univ., South Korea
fYear :
2002
fDate :
25-29 Aug. 2002
Firstpage :
106
Lastpage :
109
Abstract :
Co-doped n-type FeSi2 powders have been prepared by mechanical alloying and sintered by vacuum hot pressing. As-hot-pressed compacts were composed of untransformed mixture of α-Fe2Si5 and ε-FeSi phases. Vacuum annealing at 830°C led to the thermoelectric semiconducting β-FeSi2 phase transformation, but some residual metallic α and ε phases were unavoidable. Electronic transport parameters and thermoelectric properties were remarkably changed by annealing due to the transformation from metallic α and ε phases to semiconducting β phases. Microstructural analysis was also carried out by using TEM.
Keywords :
Seebeck effect; annealing; cobalt; electrical conductivity transitions; hot pressing; iron compounds; mechanical alloying; phase separation; semiconductor materials; sintering; transmission electron microscopy; Co-doped FeSi2; FeSi2:Co; TEM; mechanical alloying; metallic-semiconducting phase transition; sintering; thermoelectric semiconducting phase transformation; vacuum annealing; vacuum hot pressing; Alloying; Annealing; Heat sinks; Iron; Isothermal processes; Powders; Pressing; Semiconductivity; Temperature; Thermoelectricity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 2002. Proceedings ICT '02. Twenty-First International Conference on
Print_ISBN :
0-7803-7683-8
Type :
conf
DOI :
10.1109/ICT.2002.1190276
Filename :
1190276
Link To Document :
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