Title :
Frequency limitations of planar millimeter-wave diodes
Author :
Newman, T. ; Dye, M. ; Ng, K.T. ; Weinreb, S.
Author_Institution :
Virginia Univ., Charlottesville, VA, USA
Abstract :
Two inherent problems limiting the high-frequency performance of planar diodes are studied. These problems are parasitic reactances associated with the diode package, and the deterioration in performance due to higher-order moding. Both effects reduce the impedance variation of the diode as a function of voltage and limit the performance of diode mixers, frequency multipliers, and detectors. Using this approach, an optimum diode package design is found which can operate at the highest possible frequencies. The diode structure can be used at frequencies as high as 750 GHz. However, higher-order modes may limit the frequency to a lower value which is dependent on substrate thickness; e.g., a thickness of 35 μm allows no higher-order modes below 630 GHz
Keywords :
equivalent circuits; packaging; semiconductor device models; semiconductor diodes; solid-state microwave devices; submillimetre wave devices; 750 GHz; MM-wave devices; THF; high-frequency performance; higher-order moding; impedance variation; microwave device; millimeter-wave diodes; optimum diode package design; parasitic reactances; planar diodes; submillimetre wave operation; substrate thickness; Anodes; Capacitance; Equivalent circuits; Fingers; Frequency; Inductance; Microstrip; Packaging; Schottky diodes; Wire;
Conference_Titel :
Southeastcon '89. Proceedings. Energy and Information Technologies in the Southeast., IEEE
Conference_Location :
Columbia, SC
DOI :
10.1109/SECON.1989.132657
