Frequency limitations of planar millimeter-wave diodes

Author

Newman, T. ; Dye, M. ; Ng, K.T. ; Weinreb, S.

Author_Institution

Virginia Univ., Charlottesville, VA, USA

fYear

1989

fDate

9-12 Apr 1989

Firstpage

1424

Abstract

Two inherent problems limiting the high-frequency performance of planar diodes are studied. These problems are parasitic reactances associated with the diode package, and the deterioration in performance due to higher-order moding. Both effects reduce the impedance variation of the diode as a function of voltage and limit the performance of diode mixers, frequency multipliers, and detectors. Using this approach, an optimum diode package design is found which can operate at the highest possible frequencies. The diode structure can be used at frequencies as high as 750 GHz. However, higher-order modes may limit the frequency to a lower value which is dependent on substrate thickness; e.g., a thickness of 35 μm allows no higher-order modes below 630 GHz

Keywords

equivalent circuits; packaging; semiconductor device models; semiconductor diodes; solid-state microwave devices; submillimetre wave devices; 750 GHz; MM-wave devices; THF; high-frequency performance; higher-order moding; impedance variation; microwave device; millimeter-wave diodes; optimum diode package design; parasitic reactances; planar diodes; submillimetre wave operation; substrate thickness; Anodes; Capacitance; Equivalent circuits; Fingers; Frequency; Inductance; Microstrip; Packaging; Schottky diodes; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Southeastcon '89. Proceedings. Energy and Information Technologies in the Southeast., IEEE

Conference_Location

Columbia, SC

Type

conf

DOI

10.1109/SECON.1989.132657

Filename

132657