DocumentCode
3337893
Title
Data storage in ferroelectrical films by near-field optical probe
Author
Xu, Yongchen ; Pelzl, Josef
Author_Institution
Pohl Inst. of Solid State Phys., Tongji Univ., Shanghai, China
fYear
1996
fDate
25-30 Sep 1996
Firstpage
397
Lastpage
400
Abstract
We suggest that a near-field optical probe be used to store data in ferroelectric films. The near-field optical probe has a light focusing effect, the focused spot being as small as the subnanometer scale depending on the apex size of the probe. It is not limited by the diffraction principle. The data storage rate increases by at least 20 times. This is near the scale of the smallest ferroelectric domain in the films
Keywords
barium compounds; dielectric polarisation; electric domains; ferroelectric storage; ferroelectric thin films; optical focusing; optical microscopy; optical storage; strontium compounds; BaSrTiO3; data storage; ferroelectric films; film polarization; focused spot; light focusing effect; near-field optical probe; smallest ferroelectric domain; subnanometer scale; Doping; Ferroelectric films; Hysteresis; Memory; Optical films; Optical microscopy; Polarization; Probes; Temperature; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrets, 1996. (ISE 9), 9th International Symposium on
Conference_Location
Shanghai
Print_ISBN
0-7803-2695-4
Type
conf
DOI
10.1109/ISE.1996.578111
Filename
578111
Link To Document