Title :
Comparative study of Ga, In, and Mg doped ZnO thin-film scintillator with Geiger mode APD
Author :
Yanagida, Takayuki ; Fujimoto, Yutaka ; Yokota, Yuui ; Maeo, Shuji ; Kamada, Kei ; Yoshikawa, Akira ; Miyamoto, Miyuki ; Kobayashi, Jun ; Tokutake, Taichi ; Sekiwa, Hideyuki
Author_Institution :
Inst. of Multidiscipl. Res. for Adv. Mater., Tohoku Univ., Sendai, Japan
fDate :
Oct. 24 2009-Nov. 1 2009
Abstract :
Ga 25, 55, and 552 ppm doped, In 25, 53, and 141 ppm doped, Mg 1, 5, 10, 13 mol% doped ZnO thin film scintillators were grown by the Liquid Phase Epitaxy (LPE) method. Their transmittance, ¿-ray induced emission spectra were evaluated. The transmittance reached to 80% at wavelength longer than 390 nm for all the crystals. Two emission lines appeared at 390 and 550 nm, due to the free and bound excitons, respectively. Coupled with Multi Pixel Photon Counter (MPPC), the light yield and decay time were evaluated.
Keywords :
Geiger counters; II-VI semiconductors; alpha-particles; doping; excitons; gallium; indium; liquid phase epitaxial growth; magnesium; photon counting; semiconductor thin films; solid scintillation detectors; zinc compounds; Ga doped ZnO thin-film scintillator; Geiger mode APD; In doped ZnO thin-film scintillator; Mg doped ZnO thin-film scintillator; Multi Pixel Photon Counter; ZnO:Ga; ZnO:In; ZnO:Mg; bound excitons; decay time; emission lines; free excitons; light yield; liquid phase epitaxy; transmittance; wavelength 390 nm; wavelength 550 nm; ¿-ray induced emission spectra; Crystallization; Epitaxial growth; Excitons; Furnaces; Materials science and technology; Photonic crystals; Solvents; Substrates; Transistors; Zinc oxide;
Conference_Titel :
Nuclear Science Symposium Conference Record (NSS/MIC), 2009 IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-3961-4
Electronic_ISBN :
1095-7863
DOI :
10.1109/NSSMIC.2009.5402307
