DocumentCode
3337972
Title
Characteristics of broadband InP HFET millimeter-wave amplifiers and their applications in radioastronomy receivers
Author
Pospieszalski, Marian W. ; Wollack, Edward J.
Author_Institution
Nat. Radio Astron. Obs., Charlottesville, VA, USA
fYear
1997
fDate
7-8 Jul 1997
Firstpage
143
Lastpage
146
Abstract
Developments in ultra-low-noise, heterostructure field-effect transistor (HFETs) receivers for frequencies up to 110 GHz are reviewed. Design and examples of the realization of InP HFET receivers in the frequency range 26 to 110 GHz are described. Applications to ultra-low-noise radio astronomy receivers, as well as broadband continuum radiometers, are discussed
Keywords
III-V semiconductors; cryogenic electronics; indium compounds; millimetre wave amplifiers; millimetre wave circuits; radioastronomy; radiometers; wideband amplifiers; 26 to 110 GHz; III-V semiconductors; InP; broadband HFET millimeter-wave amplifiers; broadband continuum radiometers; radioastronomy receivers; ultra-low-noise receivers; Broadband amplifiers; Frequency; HEMTs; Indium phosphide; MODFETs; Millimeter wave transistors; Radio astronomy; Radiofrequency amplifiers; Radiometers; Receivers;
fLanguage
English
Publisher
ieee
Conference_Titel
Millimeter Waves, 1997 Topical Symposium on
Conference_Location
Kanagawa
Print_ISBN
0-7803-3887-1
Type
conf
DOI
10.1109/TSMW.1997.702491
Filename
702491
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