• DocumentCode
    3338168
  • Title

    Characterization of CMOS position sensitive solid-state photomultipliers

  • Author

    McClish, Mickel ; Dokhale, Purushottam ; Christian, James ; Stapels, Christopher ; Robertson, Rob ; Shah, Kanai S.

  • Author_Institution
    Radiat. Monitoring Devices, Inc., Watertown, MA, USA
  • fYear
    2009
  • fDate
    Oct. 24 2009-Nov. 1 2009
  • Firstpage
    1431
  • Lastpage
    1436
  • Abstract
    We have designed position sensitive solid-state photomultipliers (PS-SSPM) using a complementary metal-oxide-semiconductor (CMOS) process. Four variations of the PS-SSPM design were fabricated, however, only three were characterized for their energy and coincidence timing resolution, spatial resolution, and scintillator array imaging. Each PS-SSPM is 1.5 × 1.5 mm2, however, each device has different micro-pixel geometries and different micro-pixel electrical readout for event position sensing. When coupled to 1 × 1 × 20 mm3 LYSO, the energy resolution at 511 keV was measured as a function of bias. The same LYSO scintillator was used to measure the coincidence timing resolution. Results varied from 2.1 ns to 1.0 ns (FWHM) at 511 keV. Spatial resolution studies were conducted using a focused (~15 ¿m beam spot diameter) pulsed 635 nm diode laser. For each PS-SSPM, the X and Y FWHM spatial resolution was measured between 70 and 75 ¿m (FWHM). Lastly, a scintillator array studies were conducted for each PS-SSPM using a CsI:Tl and LYSO array having 300 × 300 ¿m2 and 500 × 500 ¿m2 pixels respectively.
  • Keywords
    CMOS integrated circuits; avalanche photodiodes; photomultipliers; position sensitive particle detectors; semiconductor devices; solid scintillation detectors; CMOS PS-SSPM; CMOS process; LYSO crystal scintillator; Tl doped CsI crystal scintillator; coincidence timing resolution; electron volt energy 511 keV; energy resolution; event position sensing; micropixel electrical readout; micropixel geometry; position sensitive solid state photomultipliers; scintillator array imaging; size 1 mm; size 1.5 mm; size 20 mm; size 300 mum; size 500 mum; spatial resolution; wavelength 635 nm; CMOS image sensors; CMOS process; Energy measurement; Energy resolution; Geometry; Image resolution; Photomultipliers; Solid state circuits; Spatial resolution; Timing; Avalanche photodiodes; Geiger-mode; position sensitive; solid-state photomultiplier;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record (NSS/MIC), 2009 IEEE
  • Conference_Location
    Orlando, FL
  • ISSN
    1095-7863
  • Print_ISBN
    978-1-4244-3961-4
  • Electronic_ISBN
    1095-7863
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2009.5402319
  • Filename
    5402319