DocumentCode
3338192
Title
Effect of electron concentration on the thickness dependences of the thermoelectric properties of PbTe quantum wells
Author
Rogacheva, E.I. ; Nashchekina, O.N. ; Tavrina, T.V. ; Volobuev, V.V. ; Us, M.A. ; Dresselhaus, M.S. ; Cronin, S.B.
Author_Institution
Kharkov Polytech. Inst., Nat. Tech. Univ., Kharkov, Ukraine
fYear
2002
fDate
25-29 Aug. 2002
Firstpage
280
Lastpage
283
Abstract
Oscillations were detected in the dependences of the thermoelectric properties (electrical conductivity, thermoelectric power, the Hall coefficient, charge carrier mobility, and power factor) on the PbTe layer thickness d (d=2-200 nm) in [001] KCl/PbTe/EuS quantum wells. The existence of oscillations as a function of d is attributed to quantum size effects, which manifest themselves in PbTe quantum wells at sufficiently small d. An increase in electron concentration in PbTe quantum wells leads to a more distinct manifestation of the oscillations, a shift of the extrema points as well as to an enhancement of the power factor.
Keywords
Hall effect; IV-VI semiconductors; carrier mobility; electrical conductivity; electron density; lead compounds; oscillations; semiconductor quantum wells; size effect; thermoelectric power; 2 to 200 nm; Hall coefficient; KCl-PbTe-EuS; PbTe quantum wells; charge carrier mobility; electrical conductivity; electron concentration; oscillations; power factor; quantum size effects; thermoelectric power; thermoelectric properties; thickness dependence; Charge carrier mobility; Electrons; Hafnium; Materials science and technology; Optical films; Optical surface waves; Quantization; Reactive power; Semiconductor thin films; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 2002. Proceedings ICT '02. Twenty-First International Conference on
Print_ISBN
0-7803-7683-8
Type
conf
DOI
10.1109/ICT.2002.1190319
Filename
1190319
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