Silicon nanowire (SiNW) growth using Vapor Liquid Solid method with gold nanoparticle (Au-np) catalyst

Author

Surawijaya, A. ; Anshori, I. ; Rohiman, A. ; Idris, I.

Author_Institution

Sch. of Electr. Eng. & Inf., Bandung Inst. of Technol., Bandung, Indonesia

fYear

2011

fDate

17-19 July 2011

Firstpage

1

Lastpage

3

Abstract

Silicon Nanowire (Si-NW) is one of the promising nanodevices which attract many attentions due to its potential applications in many fields. We used Vapor-Liquid-Solid (VLS) method to grow SiNW on silicon <;100>; with gold nanoparticles (Au-np) as catalyst. SiNWs are grown in CVD reactor with Vapor-Liquid-Solid method. SiNWs with diameter 20-40 nm and lenght ~500-800 nm has been successfully grown. As a preliminary analysis on its electrical behaviour we used online simulator for nanowires to predict its I-V characteristics.

Keywords

catalysts; chemical vapour deposition; elemental semiconductors; gold; nanofabrication; nanoparticles; nanowires; semiconductor growth; silicon; CVD reactor; I-V characteristics; Si-Au; electrical behaviour; nanoparticle catalyst; silicon nanowire; size 20 nm to 40 nm; vapor liquid solid method; Electric variables; Gold; Nanobioscience; Scanning electron microscopy; Silicon; Temperature; Gold Nanoparticle; Silicon Nanowire; Vapor-Liquid-Solid;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering and Informatics (ICEEI), 2011 International Conference on

Conference_Location

Bandung

ISSN

2155-6822

Print_ISBN

978-1-4577-0753-7

Type

conf

DOI

10.1109/ICEEI.2011.6021750

Filename

6021750