Title :
Effect of the selenization process on structural and device properties of nanoparticle-derived CZTSSe thin films
Author :
Choudhury, Kaushik Roy ; Yanyan Cao ; Caspar, Jonathan V. ; Qijie Guo ; Johnson, Lynda K. ; Malajovich, Irina ; Radu, Dragomir ; David Rosenfeld, H. ; Silverman, Lee ; Wei Wu
Author_Institution :
Central R&D, E.I. du Pont de Nemours & Co., Wilmington, DE, USA
Abstract :
Cu2ZnSn(S,Se)4 thin films and solar cells were fabricated using binary and ternary nanoparticle precursor films selenized using three different processes. Cross-sectional SEM images of the resulting CZTSSe solar cells do not show significant difference in microstructure. Detail analyses of the CZTSSe solar cells using current-voltage (J-V), external quantum efficiency (EQE), temperature-dependent J-V, and admittance spectroscopy (AS) were conducted to investigate the effect of the selenization process on the optical and electrical properties of the absorber.
Keywords :
copper compounds; electric admittance; nanofabrication; nanoparticles; scanning electron microscopy; semiconductor growth; semiconductor materials; semiconductor thin films; solar cells; tin compounds; zinc compounds; Cu2ZnSn(S)4; Cu2ZnSn(Se)4; SEM; absorber; admittance spectroscopy; binary nanoparticle; electrical properties; external quantum efficiency; nanoparticle-derived thin films; optical properties; selenization; solar cells; structural properties; temperature-dependent current-voltage characteristics; ternary nanoparticle; Capacitance; Films; Photonic band gap; Photovoltaic cells; Process control; Temperature distribution; Temperature measurement; CZTSSe; selenization; thin-film solar cell;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6744095
