Title :
600 mV epitaxial crystal silicon solar cells grown on seeded glass
Author :
Young, David L. ; Teplin, Charles W. ; Grover, Sachit ; Lee, Bang-Wook ; Jihun Oh ; LaSalvia, Vincenzo ; Amkreutz, Daniel ; Gall, S. ; Chahal, Monica ; Couillard, Greg J. ; Ta-Ko Chuang ; Selj, Josefine ; Deceglie, Michael ; Atwater, H. ; Branz, H.M. ; St
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
We report progress made at the National Renewable Energy Laboratory (NREL) on crystal silicon solar cells fabricated by epitaxially thickening thin silicon seed layers on glass using hot-wire chemical vapor deposition. Four micron thick devices grown on single-crystal silicon layer transfer seeds on glass achieved open circuit voltages (Voc) over 600 mV and efficiencies over 10%. Other devices were grown on laser crystallized mixed phase solidification (MPS) seeds on glass and e-beam crystallized (EBC) a-Si on SiC coated glass seeds. We discuss the material quality of the various devices on seeds and summarize the prospects for the seed and epitaxy PV approach.
Keywords :
carbon compounds; chemical beam epitaxial growth; chemical vapour deposition; elemental semiconductors; glass; laser materials processing; photovoltaic cells; silicon compounds; solar cells; solidification; thick film devices; MPS; NREL; National Renewable Energy Laboratory; e-beam crystallized silicon; epitaxial crystal silicon solar cells; epitaxy PV approach; hot-wire chemical vapor deposition; laser crystallized mixed phase solidification seeds; open circuit voltages; photovoltaic cells; silicon carbide coated glass seeds; single-crystal silicon layer; thick devices; thin silicon seed layers; voltage 600 mV; Crystals; Epitaxial growth; Glass; Photovoltaic cells; Silicon; Substrates; epitaxy; photovoltaic cells; seed layer; silicon;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6744098