Title :
Thermal design of fully-isolated bipolar transistors
Author :
Russo, S. ; Spina, L. La ; Alessandro, V.D. ; Rinaldi, N. ; Nanver, L.K.
Author_Institution :
Lab. of Electron. Components, Delft Univ. of Technol., Delft
Abstract :
The impact of layout parameters on the thermal behavior of BJTs with full dielectric isolation is extensively analyzed by measurements and numerical simulations. The influence of the aspect ratio of the emitter stripe as well as the consequences of the device scaling are investigated from a thermal viewpoint. It is shown that the metallization design plays a key role in the thermal response of fully-isolated devices. As a conclusion, plain guidelines are provided to optimize the thermal design.
Keywords :
bipolar transistors; network synthesis; numerical analysis; dielectric isolation; emitter stripe; fully-isolated bipolar transistors; metallization design; numerical simulation; thermal design; thermal response; Bipolar transistors; Electric variables measurement; Guidelines; Numerical simulation; Pulse measurements; Silicon; Substrates; Temperature; Thermal conductivity; Thermal resistance;
Conference_Titel :
Thermal Inveatigation of ICs and Systems, 2008. THERMINIC 2008. 14th International Workshop on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-3365-0
Electronic_ISBN :
978-2-35500-008-9
DOI :
10.1109/THERMINIC.2008.4669888
