DocumentCode :
3339436
Title :
Current matching optimization in high-efficiency thin-film silicon tandem solar cells
Author :
Bonnet-Eymard, Maximilien ; Boccard, Mathieu ; Bugnon, Gregory ; Meillaud, Fanny ; Despeisse, Matthieu ; Haug, Franz-Josef ; Ballif, Christophe
Author_Institution :
Photovoltaics & Thin Film Electron. Lab. (PV-Lab.), Ecole Polytech. Fed. de Lausanne (EPFL), Neuchatel, Switzerland
fYear :
2013
fDate :
16-21 June 2013
Abstract :
In thin-film silicon “micromorph” tandem photovoltaics devices, the fill factor (FF) of the microcrystalline silicon (μc-Si:H) bottom cell is typically higher than that of the amorphous silicon (a-Si:H) top cell. Consequently, in order to maximize the efficiency, the bottom cell should be slightly limiting the current in short-circuit condition. Using an intermediate reflector layer (IRL) is a good solution to increase the photocurrent in the top cell without changing the thickness of the active layer. In this contribution, we evaluate different IRL by measuring current-voltage (I-V) characteristics of tandem cells under various irradiance spectra (from red-rich to blue-rich), to vary the short-circuit current matching conditions (from top-limited to bottom-limited). This technique is applicable to multi-junction device of any other photovoltaic technology. With this experiment, a fair appreciation of the IRL relevance can be made, regardless of the sub-cells current matching under AM 1.5 G. By this study, we show that a non-appropriate deposition regime for the silicon-oxide-based IRL can affect the stability of the bottom cell of micromorph devices. We then show that with appropriate deposition regime the degradation rate of micromorph devices can be drastically reduced. Combining such an IRL with all recent development in our laboratory, we obtained a tandem efficiency of 11.9 % under AM 1.5G.
Keywords :
amorphous semiconductors; elemental semiconductors; photoconductivity; silicon; solar cells; thin film devices; I-V characteristics; Si; amorphous silicon top cell; current matching optimization; current-voltage characteristics; fill factor; intermediate reflector layer; irradiance spectra; microcrystalline silicon bottom cell; micromorph tandem photovoltaics devices; multijunction device; nonappropriate deposition regime; photocurrent; short-circuit condition; silicon oxide; thin-film silicon tandem solar cells; Current measurement; Degradation; Photovoltaic cells; Photovoltaic systems; Short-circuit currents; Silicon; Current Matching; Intermediate Reflector; Irradiance Spectrum; Tandem solar cells; Thin-Film Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
Type :
conf
DOI :
10.1109/PVSC.2013.6744126
Filename :
6744126
Link To Document :
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