• DocumentCode
    3339865
  • Title

    A SiGe front-end prototype for the upgraded ATLAS liquid argon calorimeter

  • Author

    Rescia, Sergio

  • Author_Institution
    Brookhaven Nat. Lab., Upton, NY, USA
  • fYear
    2009
  • fDate
    Oct. 24 2009-Nov. 1 2009
  • Firstpage
    1134
  • Lastpage
    1137
  • Abstract
    We have designed and fabricated a very low noise preamplifier and shaper to replace the existing ATLAS Liquid Argon readout for use at the Large Hadron Collider upgrade (SLHC). IBM´s 8WL 130nm SiGe process was chosen for its radiation tolerance, low noise bipolar NPN devices, wide voltage range and potential use in other SLHC detector subsystems. Although the requirements for the final design have not been yet finalized, the prototype was designed to accommodate a 16 bit dynamic range. This was accomplished by using a single stage, low noise, wide dynamic range preamplifier followed by a dual range shaper. The low noise of the preamp is made possible by the low base spreading resistance of the silicon germanium NPN bipolar transistors. The relatively high voltage rating of the NPN transistors is exploited to allow a gain of 650V/A in the preamplifier which eases the input voltage noise requirement on the shaper. Each shaper stage is designed as a cascaded differential operational amplifier pair with a common mode operating point regulated by an internal feedback loop. Measurement of the fabricated circuits indicates their performance is consistent with the design specifications including the radiation tolerance targets.
  • Keywords
    operational amplifiers; particle calorimetry; preamplifiers; readout electronics; semiconductor counters; ATLAS; SLHC detector subsystems; SiGe front-end prototype; SiGe process; cascaded differential operational amplifier pair; dual range shaper; high voltage rating; input voltage noise; internal feedback loop; liquid argon calorimeter; liquid argon readout electronics; low base spreading resistance; low noise bipolar NPN devices; low noise preamplifier; mode operating point; radiation tolerance; silicon germanium NPN bipolar transistors; wide voltage range; Argon; Dynamic range; Germanium silicon alloys; Large Hadron Collider; Noise shaping; Preamplifiers; Prototypes; Radiation detectors; Silicon germanium; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record (NSS/MIC), 2009 IEEE
  • Conference_Location
    Orlando, FL
  • ISSN
    1095-7863
  • Print_ISBN
    978-1-4244-3961-4
  • Electronic_ISBN
    1095-7863
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2009.5402408
  • Filename
    5402408