DocumentCode :
3339932
Title :
Electron spectroscopy of conduction electrons excited by visible light utilizing NEA surface
Author :
Ichihashi, Fumiaki ; Shimura, Daisuke ; Nishitani, Kenji ; Kuwahara, Masashi ; Ito, Takao ; Harada, Shingo ; Tagawa, Masaki ; Ujihara, Toru
Author_Institution :
Dept. of Mater. Sci. & Eng., Nagoya Univ., Nagoya, Japan
fYear :
2013
fDate :
16-21 June 2013
Abstract :
In this paper we propose an angle-resolved photoemission spectroscopy to observe the conduction electrons emitted from a surface of negative electron affinity state. In actual, we have measured conduction electrons in a GaAs bulk crystal and obtained the electron dispersion around Γ point. In addition, we could also observe hot electrons excited by the light which energy was much larger than band gap energy. These results suggest that the method we proposed is one of the most powerful tools for the evaluation method of the conduction band.
Keywords :
III-V semiconductors; electron spectroscopy; energy gap; gallium arsenide; hot carriers; photoelectron spectra; solar cells; GaAs; angle-resolved photoemission spectroscopy; band gap energy; bulk crystal; conduction electrons; electron dispersion; electron spectroscopy; intermediate-band solar cells; negative electron; visible light utilizing NEA surface; Gallium arsenide; Photoelectricity; Photovoltaic cells; Semiconductor device measurement; Spectroscopy; Surface cleaning; III-V compound semiconductor; intermediate-band solar cells; negative electron affinity surface; photoelectron spectroscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
Type :
conf
DOI :
10.1109/PVSC.2013.6744149
Filename :
6744149
Link To Document :
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