Title :
A long-channel model for the asymmetric double-gate MOSFET valid in all regions of operation
Author :
Kammula, Abhishek ; Minch, Bradley A.
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
We present a physically based, continuous analytical model for long-channel double-gate MOSFETs. The model is particularly well suited for implementation in circuit simulators due to the simple expressions for the current and the continuous nature of the derivatives of the current which improves convergence behavior.
Keywords :
MOSFET; circuit simulation; semiconductor device models; asymmetric double-gate MOSFET; circuit simulators; continuous analytical model; convergence behavior; long-channel model; physically based model; Analog circuits; Circuit simulation; Computational modeling; Convergence; Electrons; Laplace equations; MOSFET circuits; Physics computing; Silicon; Voltage;
Conference_Titel :
Mixed-Signal Design, 2003. Southwest Symposium on
Print_ISBN :
0-7803-7778-8
DOI :
10.1109/SSMSD.2003.1190416
