DocumentCode :
3340193
Title :
A high-speed dynamic current sensor for iDD test based on the flipped voltage follower
Author :
Ducoudray, Gladys Omayra ; González-Carvajal, Ramon ; Ramirez-Angulo, Jaime
Author_Institution :
New Mexico State Univ., Las Cruces, NM, USA
fYear :
2003
fDate :
23-25 Feb. 2003
Firstpage :
208
Lastpage :
211
Abstract :
This paper proposes the use of the flipped voltage follower as a high speed current sensor for iDD current testing. Simulations in 0.18 μm CMOS technology, as well as experimental results from a breadboard prototype are provided that verify functionality and the potential for high gain-bandwidth of the proposed circuit.
Keywords :
CMOS integrated circuits; electric current measurement; electric sensing devices; integrated circuit testing; mixed analogue-digital integrated circuits; 0.18 micron; CMOS technology; flipped voltage follower; high-speed dynamic current sensor; iDD current testing; low-voltage current sensor; mixed-signal circuit testing; Bandwidth; CMOS technology; Circuit simulation; Circuit testing; Current supplies; Impedance; Low voltage; Mirrors; Rails; Resistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Mixed-Signal Design, 2003. Southwest Symposium on
Print_ISBN :
0-7803-7778-8
Type :
conf
DOI :
10.1109/SSMSD.2003.1190428
Filename :
1190428
Link To Document :
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