Title :
Selenium treatment on the polycrystalline CuIn1−xGaxSe2 thin films sputtered from a quaternary target
Author :
Chuan Chang ; Chia-Hao Hsu ; Wei-Hao Ho ; Shih-Yuan Wei ; Yue-Shun Su ; Chih-Huang Lai
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
In this work, selenium treatment at 250-350°C on the polycrystalline CuIn1-xGaxSe2 (CIGS) thin films sputtered from a quaternary target has been investigated in order to passivate anionic defects which induce the current-blocking behavior and lowering open circuit voltage. The CIGS thin films were selenized in a closed-space graphite container. The result of selenization was characterized by Raman spectroscopy, EQE and the current-voltage-temperature measurement. After selenization at 350°C, the current-blocking behavior is inhibited and Voc increases from 310mV to 640mV. Until now, the efficiency near 9% can be obtained by an optimized selenization process.
Keywords :
Raman spectra; copper compounds; gallium compounds; indium compounds; semiconductor growth; semiconductor thin films; sputter deposition; ternary semiconductors; CuIn1-xGaxSe2; Raman spectroscopy; anionic defects; closed-space graphite container; current-blocking behavior; current-voltage-temperature measurement; open circuit voltage; polycrystalline thin films; quaternary target; sputtered thin films; temperature 350 degC; Atmospheric measurements; Current measurement; Materials; Photovoltaic cells; Temperature; Temperature measurement; Wavelength measurement; anionic defect; current-blocking; current-voltage-temperature measurement; quaternary target; recombination; selenium treatment;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6744167
