Conduit diffusion of dopants in tungsten silicide layers

Author

Liao, S. ; Bain, M. ; Baine, P. ; McNeill, D.W. ; Armstrong, B.M. ; Gamble, H.S.

Author_Institution

Sch. of Electron., Electr. Eng. & Comput. Sci., Queen´´s Univ. of Belfast, Belfast

fYear

2008

fDate

24-27 March 2008

Firstpage

65

Lastpage

70

Abstract

Novel test diode structures have been manufactured to characterise dopant diffusion in tungsten silicide layers. Bipolar diode action is demonstrated experimentally for anneal schedules of 30 minutes at 900degC, indicating long- range diffusion of phosphorus (~ 38 mum). The work function of the silicide was found to be 4.8 eV. SIMS analysis shows dopant redistribution is effected by the segregation to the silicide/oxide interface. The concept of conduit diffusion has been demonstrated experimentally for application in advanced bipolar transistor technology.

Keywords

bipolar transistors; diffusion; doping; phosphorus; tungsten compounds; advanced bipolar transistor technology; bipolar diode action; conduit diffusion; dopant diffusion; phosphorus; temperature 900 C; test diode structures; time 30 min; tungsten silicide layers; voltage 4.8 EV; Microelectronics; Silicides; Testing; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2008. ICMTS 2008. IEEE International Conference on

Conference_Location

Edinburgh

Print_ISBN

978-1-4244-1800-8

Electronic_ISBN

978-1-4244-1801-5

Type

conf

DOI

10.1109/ICMTS.2008.4509315

Filename

4509315