Title :
National program: thin film solar cells program in Japan - achievements and challenges
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
Abstract :
The results of the Japanese four-year thin film solar cell program, which was initiated in 1997, were reviewed and evaluated. The evaluation showed that substantial progress was made in thin film technology in the past four years and the almost all targets were met as of March 2001. As a result of the wide-ranging break-throughs achieved during the past four-year program, a new five-year program has been initiated from FY2001 aiming at more challenging targets. The major part of this program is the development of large area Si based thin film solar cells and CIGS thin film solar cells with efficiencies over 12% and 13%, respectively. Up to now, an initial efficiency of 12.3% and an efficiency of 13.6% have been achieved for a large area hybrid module and a CIGS module, respectively. In this paper, Japanese activities in the area of thin film solar cells will be discussed.
Keywords :
elemental semiconductors; semiconductor device measurement; semiconductor thin films; silicon; solar cells; 12 percent; 13 percent; CIGS thin film solar cells; Japan; Si; efficiency; large area Si based thin film solar cells; thin film solar cells program; thin film technology; Amorphous materials; Costs; Manufacturing; Photovoltaic cells; Research and development; Semiconductor films; Semiconductor thin films; Substrates; Thin film devices; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190451