DocumentCode :
3340591
Title :
Variant designs and characteristics of improved microstructured solid-state neutron detectors
Author :
Bellinger, S.L. ; McNeil, W.J. ; McGregor, D.S.
Author_Institution :
SMART Lab., Kansas State Univ., Manhattan, KS, USA
fYear :
2009
fDate :
Oct. 24 2009-Nov. 1 2009
Firstpage :
986
Lastpage :
989
Abstract :
Perforated semiconductor neutron detectors are compact, high-efficiency, diode detectors that operate at low power. Microstructured neutron detector fabrication methods have been improved over previous manufacturing methods. The neutron detectors are easily fabricated from high purity n-type Si, in which patterned trenches are etched into the Si substrate, wherein shallow p-type junctions are diffused. The trenches are then backfilled with 6LiF powder, making the devices sensitive to reaction products from the 6Li(n,t)3He reaction. Pulse height spectra show improved signal-to-noise ratio, higher neutron counting efficiency, and excellent gamma-ray discrimination over previous microstructured neutron detector designs. Thermal neutron detection measurements from a 0.0253 eV diffracted neutron beam, yielded 20.4% intrinsic detection efficiency for devices with 245 micron deep trenches and 21% intrinsic detection efficiency for two back-to-back devices each having 113 micron deep trenches.
Keywords :
neutron detection; silicon radiation detectors; 6Li(n,t)3He; 6LiF powder; diffracted neutron beam; diode detectors; gamma-ray discrimination; micron deep trenches; microstructured neutron detector fabrication methods; microstructured solid-state neutron detectors; n-type silicon; neutron counting efficiency; p-type junctions; pulse height spectra; semiconductor neutron detectors; signal-to-noise ratio; silicon substrate; thermal neutron detection; variant designs; Envelope detectors; Etching; Fabrication; Helium; Neutrons; Powders; Semiconductor device manufacture; Signal to noise ratio; Solid state circuits; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record (NSS/MIC), 2009 IEEE
Conference_Location :
Orlando, FL
ISSN :
1095-7863
Print_ISBN :
978-1-4244-3961-4
Electronic_ISBN :
1095-7863
Type :
conf
DOI :
10.1109/NSSMIC.2009.5402447
Filename :
5402447
Link To Document :
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