DocumentCode
3340725
Title
Advances in high throughput wafer and solar cell technology for EFG ribbon
Author
Kalejs, J. ; Mackintosh, B. ; Schmidt, Werner ; Woesten, B.
Author_Institution
ASE Americas Inc., Billerica, MA, USA
fYear
2002
fDate
19-24 May 2002
Firstpage
74
Lastpage
77
Abstract
Construction of as many as 70 × 100 MW manufacturing facilities in the next two decades is required to address U.S. Photovoltaic Industry Roadmap targets. Effective material utilization, high throughput and yield, improvements in solar cell efficiency, and minimizing the environmental impact of manufacturing waste products are all desirable attributes that must be combined in low cost factory equipment. We discuss how these elements are being addressed with ribbon technology now under development for crystalline silicon wafer production by the Edge-defined Film-fed Growth (EFG) method.
Keywords
crystal growth from melt; elemental semiconductors; semiconductor device manufacture; semiconductor growth; silicon; solar cells; 100 MW; EFG ribbon; Si; edge-defined film-fed growth method; effective material utilization; environmental impact; high throughput wafer technology; low cost factory equipment; manufacturing waste products; solar cell efficiency; solar cell technology; Construction industry; Costs; Crystalline materials; Manufacturing industries; Photovoltaic cells; Photovoltaic systems; Production facilities; Solar power generation; Throughput; Waste materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN
1060-8371
Print_ISBN
0-7803-7471-1
Type
conf
DOI
10.1109/PVSC.2002.1190459
Filename
1190459
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