• DocumentCode
    3340795
  • Title

    X-ray failure analysis techniques

  • Author

    Shannon, J. ; Grady, B. ; Jones, M. ; Portillo, S.

  • Author_Institution
    Directed Energy Div., Pulsed Power & RF Syst. Branch, Dahlgren, VA, USA
  • fYear
    2010
  • fDate
    20-24 Sept. 2010
  • Firstpage
    737
  • Lastpage
    740
  • Abstract
    While most organizations in the High Power Microwave and Electromagnetic Pulse (HPM/EMP) community want to know “Can I effect that device?” this paper will help answer the complicated and ever-growing question “How did I effect that device?” Using the Metris XT V 160 X-ray Inspection machine, techniques for detecting physical effects of HPM sources on circuit components have been developed. Effects that can be detected range from evaporated wire bonds within an Integrated Circuit (IC) package to damaged traces on an IC Die. The non-perturbing techniques developed can save valuable time and money in the failure analysis community, and provide HPM source developers with data to help with the next generation of HPM weapons.
  • Keywords
    X-ray analysis; X-ray imaging; electromagnetic pulse; integrated circuit packaging; HPM weapons; HPM-EMP; IC package; Metris XT V 160 X-ray inspection machine; X-ray failure analysis techniques; failure analysis community; high power microwave-electromagnetic pulse; integrated circuit; Communities; Failure analysis; Integrated circuits; Manufacturing; Microwave circuits; Microwave imaging; Wire; Failure analysis; Semiconductor defects; X-ray imaging;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electromagnetics in Advanced Applications (ICEAA), 2010 International Conference on
  • Conference_Location
    Sydney, NSW
  • Print_ISBN
    978-1-4244-7366-3
  • Type

    conf

  • DOI
    10.1109/ICEAA.2010.5651894
  • Filename
    5651894