Title :
First observation of the deflection of a 33 TeV Pb ion beam in a bent silicon crystal
Author :
Biino, C. ; Clément, M. ; Doble, N. ; Elsener, K. ; Gatignon, L. ; Grafström, P. ; Mikkelsen, U. ; Taratin, A. ; Møller, S.P. ; Uggerhøj, E. ; Keppler, P. ; Major, J.
Author_Institution :
CERN, Geneva, Switzerland
Abstract :
For the first time, the deflection of an ultra-relativistic, fully stripped Pb82+ ion beam in a bent silicon crystal has been observed. The ions were provided by the CERN-SPS in the H4 beam at a momentum of 400 GeV/c per unit of charge. A 60 mm long silicon crystal, bent over 50 mm to give a 4 mrad deflection angle, was used in this experiment. The measured Pb ion deflection efficiency is comparable to the one obtained with protons at an equivalent ratio of momentum per charge, and is found to be about 15% for a beam with a divergence of 35 microradians (FWHM). The interaction rate observed in a background counter is found to drop when the crystal is well aligned with the beam. This corroborates further the channeling model, which predicts that channeled ions are steered away from regions of high electron densities as well as the nuclei in the crystal
Keywords :
channelling; elemental semiconductors; ion beam effects; lead; positive ions; silicon; 33 TeV; 60 mm; Pb; bent crystal; channeling model; ion beam deflection; ion deflection efficiency; ultrarelativistic fully stripped Pb82+ ion beam; Charge measurement; Counting circuits; Current measurement; Electrons; Ion beams; Particle beam measurements; Particle beams; Predictive models; Protons; Silicon;
Conference_Titel :
Particle Accelerator Conference, 1997. Proceedings of the 1997
Conference_Location :
Vancouver, BC
Print_ISBN :
0-7803-4376-X
DOI :
10.1109/PAC.1997.749579