• DocumentCode
    3340996
  • Title

    A comparison of wafers sawn by resin bonded and electroplated diamond wire — From wafer to cell

  • Author

    Pin-Hsueh Tsai ; Yen-Chun Chou ; Shang-Wei Yang ; Yu-Chung Chen ; Chih-Hsyong Wu

  • Author_Institution
    Motech Ind., Inc., Tainan, Taiwan
  • fYear
    2013
  • fDate
    16-21 June 2013
  • Abstract
    In this work we investigated the wafer quality from wafer process to cell process. These wafers were sawn by two types of diamond wire. The difference between the two types of diamond wires is the bonding layer - resin bonded and electroplated. To investigate the wafers´ quality, few wafers are taken to test the breakage strength with bending test. We observed the wafer morphology with SEM. The subsurface damage was observed with TEM and Raman spectroscopy. At last wafers were made to cells for electrical performance verification.
  • Keywords
    diamond; electroplating; resins; scanning electron microscopy; transmission electron microscopy; wafer bonding; Raman spectroscopy; SEM; TEM; bending test; bonding layer; breakage strength; electrical performance verification; electroplated diamond wire; resin bonding; wafer morphology; wafer process; wafer quality; Bonding; Diamonds; Resins; Sawing; Scanning electron microscopy; Slurries; Wires; Materials processing; Photovoltaic cells; Product development; Research and development; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
  • Conference_Location
    Tampa, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.2013.6744204
  • Filename
    6744204