RIE-texturing of industrial multicrystalline silicon solar cells

Author

Ruby, Douglas S. ; Zaidi, Saleem H. ; Narayanan, S. ; Bathey, Bala ; Yamanaka, Satoshi ; Balanga, Ruben

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

fYear

2002

fDate

19-24 May 2002

Firstpage

146

Lastpage

149

Abstract

We developed a maskless plasma texturing technique for multicrystalline Si (mc-Si) cells using reactive ion etching (RIE) that results in higher cell performance than that of standard untextured cells. Elimination of plasma damage has been achieved while keeping front reflectance to low levels. Internal quantum efficiencies higher than those on planar and wet-textured cells have been obtained, boosting cell currents and efficiencies by up to 6% on tricrystalline Si cells.

Keywords

elemental semiconductors; semiconductor device measurement; silicon; solar cells; sputter etching; surface texture; RIE-texturing; Si; cell performance; front reflectance; internal quantum efficiency; maskless plasma texturing; multicrystalline silicon solar cells; reactive ion etching; Costs; Etching; Laboratories; Photovoltaic cells; Plasma applications; Plasma chemistry; Plasma waves; Reflectivity; Silicon; Surface texture;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE

ISSN

1060-8371

Print_ISBN

0-7803-7471-1

Type

conf

DOI

10.1109/PVSC.2002.1190477

Filename

1190477

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3341003