DocumentCode :
3341003
Title :
RIE-texturing of industrial multicrystalline silicon solar cells
Author :
Ruby, Douglas S. ; Zaidi, Saleem H. ; Narayanan, S. ; Bathey, Bala ; Yamanaka, Satoshi ; Balanga, Ruben
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fYear :
2002
fDate :
19-24 May 2002
Firstpage :
146
Lastpage :
149
Abstract :
We developed a maskless plasma texturing technique for multicrystalline Si (mc-Si) cells using reactive ion etching (RIE) that results in higher cell performance than that of standard untextured cells. Elimination of plasma damage has been achieved while keeping front reflectance to low levels. Internal quantum efficiencies higher than those on planar and wet-textured cells have been obtained, boosting cell currents and efficiencies by up to 6% on tricrystalline Si cells.
Keywords :
elemental semiconductors; semiconductor device measurement; silicon; solar cells; sputter etching; surface texture; RIE-texturing; Si; cell performance; front reflectance; internal quantum efficiency; maskless plasma texturing; multicrystalline silicon solar cells; reactive ion etching; Costs; Etching; Laboratories; Photovoltaic cells; Plasma applications; Plasma chemistry; Plasma waves; Reflectivity; Silicon; Surface texture;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN :
1060-8371
Print_ISBN :
0-7803-7471-1
Type :
conf
DOI :
10.1109/PVSC.2002.1190477
Filename :
1190477
Link To Document :
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