• DocumentCode
    3341030
  • Title

    Optically enhanced absorption in thin silicon layers using photonic crystals

  • Author

    Gee, Jamek M.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM, USA
  • fYear
    2002
  • fDate
    19-24 May 2002
  • Firstpage
    150
  • Lastpage
    153
  • Abstract
    Yablonovitch derived a limit to enhancement in optical absorption in the weak absorption regime for a textured solar cell of 4n2, where n is the refractive index of the medium. This limit assumes that the incident rays experience full randomization inside the medium so that all the photonic states are filled equally. We demonstrate that this statistical limit can be exceeded over a limited spectral and angular range using photonic structures. We theoretically examine the use of photonic crystals to improve the optical absorption. Photonic crystals have a periodic modulation of the refractive index that alters the photonic density of states. A simple model of a silicon photonic crystal is presented in order to illustrate the possible optical enhancement in thin silicon layers.
  • Keywords
    elemental semiconductors; optical materials; photonic band gap; photonic crystals; refractive index; semiconductor thin films; silicon; solar cells; surface texture; Si; optical enhancement; optically enhanced absorption; photonic crystals; photonic density of states; photonic states; photonic structures; refractive index; textured solar cell; thin silicon layers; Absorption; Geometrical optics; Optical coupling; Optical refraction; Optical scattering; Optical variables control; Photonic crystals; Photovoltaic cells; Refractive index; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
  • ISSN
    1060-8371
  • Print_ISBN
    0-7803-7471-1
  • Type

    conf

  • DOI
    10.1109/PVSC.2002.1190478
  • Filename
    1190478