• DocumentCode
    3341036
  • Title

    Influence of STI stress on drain current matching in advanced CMOS

  • Author

    Wils, Nicole ; Tuinhout, Hans ; Meijer, Maurice

  • Author_Institution
    NXP-TSMC Res. Center, Eindhoven
  • fYear
    2008
  • fDate
    24-27 March 2008
  • Firstpage
    238
  • Lastpage
    243
  • Abstract
    Using a dedicated set of - asymmetrically designed - matched pair test structures and a data analysis technique based on so-called mismatch sweeps, we answer some important questions in the discussions on variability in advanced CMOS technologies.
  • Keywords
    CMOS integrated circuits; internal stresses; CMOS; drain current matching; shallow trench isolation stress; CMOS technology; Data analysis; Fluctuations; Isolation technology; MOS devices; MOSFETs; Microelectronics; Semiconductor device testing; Stress; System testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 2008. ICMTS 2008. IEEE International Conference on
  • Conference_Location
    Edinburgh
  • Print_ISBN
    978-1-4244-1800-8
  • Electronic_ISBN
    978-1-4244-1801-5
  • Type

    conf

  • DOI
    10.1109/ICMTS.2008.4509345
  • Filename
    4509345
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3341036