Title :
Influence of STI stress on drain current matching in advanced CMOS
Author :
Wils, Nicole ; Tuinhout, Hans ; Meijer, Maurice
Author_Institution :
NXP-TSMC Res. Center, Eindhoven
Abstract :
Using a dedicated set of - asymmetrically designed - matched pair test structures and a data analysis technique based on so-called mismatch sweeps, we answer some important questions in the discussions on variability in advanced CMOS technologies.
Keywords :
CMOS integrated circuits; internal stresses; CMOS; drain current matching; shallow trench isolation stress; CMOS technology; Data analysis; Fluctuations; Isolation technology; MOS devices; MOSFETs; Microelectronics; Semiconductor device testing; Stress; System testing;
Conference_Titel :
Microelectronic Test Structures, 2008. ICMTS 2008. IEEE International Conference on
Conference_Location :
Edinburgh
Print_ISBN :
978-1-4244-1800-8
Electronic_ISBN :
978-1-4244-1801-5
DOI :
10.1109/ICMTS.2008.4509345
