DocumentCode :
3341255
Title :
Application of SnO2 substrate to top cell for spectrum splitting type solar cell
Author :
Sinae Kim ; Kasashima, Shunsuke ; Sichanugrist, Porponth ; Konagai, Makoto
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan
fYear :
2013
fDate :
16-21 June 2013
Abstract :
We have developed a spectrum splitting type solar cell using a-Si and CIGS as the top and bottom cells, respectively. To increase its performance the top a-Si cell with high Voc and good response at the short wavelength has to be developed. Up to now ZnO has been used as the front TCO. However, since the band gap of ZnO is lower than the one of SnO2, it is better to use SnO2 instead of ZnO. Furthermore, in this splitting solar cell there is no need for front TCO to be much textured. Here we present a initial introduction how to apply commercial and hazy SnO2 to the top cell. Ar treatment has been used in order to flatten the surface of SnO2. As the results high Voc as high as 0.967V has been achieved with smoother SnO2 surface.
Keywords :
amorphous semiconductors; copper compounds; elemental semiconductors; gallium compounds; indium compounds; silicon; solar cells; ternary semiconductors; CIGS; CuInGaSe2-Si; SnO2; TC0; amorphous silicon solar cell; spectrum splitting type solar cell; Optical surface waves; Photovoltaic cells; Plasmas; Substrates; Surface morphology; Surface treatment; Zinc oxide; SnO2; VHF-PECVD; amorphous silicon solar cell;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
Type :
conf
DOI :
10.1109/PVSC.2013.6744216
Filename :
6744216
Link To Document :
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