DocumentCode
3341255
Title
Application of SnO2 substrate to top cell for spectrum splitting type solar cell
Author
Sinae Kim ; Kasashima, Shunsuke ; Sichanugrist, Porponth ; Konagai, Makoto
Author_Institution
Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan
fYear
2013
fDate
16-21 June 2013
Abstract
We have developed a spectrum splitting type solar cell using a-Si and CIGS as the top and bottom cells, respectively. To increase its performance the top a-Si cell with high Voc and good response at the short wavelength has to be developed. Up to now ZnO has been used as the front TCO. However, since the band gap of ZnO is lower than the one of SnO2, it is better to use SnO2 instead of ZnO. Furthermore, in this splitting solar cell there is no need for front TCO to be much textured. Here we present a initial introduction how to apply commercial and hazy SnO2 to the top cell. Ar treatment has been used in order to flatten the surface of SnO2. As the results high Voc as high as 0.967V has been achieved with smoother SnO2 surface.
Keywords
amorphous semiconductors; copper compounds; elemental semiconductors; gallium compounds; indium compounds; silicon; solar cells; ternary semiconductors; CIGS; CuInGaSe2-Si; SnO2; TC0; amorphous silicon solar cell; spectrum splitting type solar cell; Optical surface waves; Photovoltaic cells; Plasmas; Substrates; Surface morphology; Surface treatment; Zinc oxide; SnO2 ; VHF-PECVD; amorphous silicon solar cell;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location
Tampa, FL
Type
conf
DOI
10.1109/PVSC.2013.6744216
Filename
6744216
Link To Document