• DocumentCode
    3341461
  • Title

    A precision output conductance model for analog CMOS circuit simulations

  • Author

    Seon, Jong Kug ; Yoon, Kwang Sub

  • Author_Institution
    Dept. of Electr. Eng., Inha Univ., Inchon, South Korea
  • Volume
    3
  • fYear
    1995
  • fDate
    30 Apr-3 May 1995
  • Firstpage
    1584
  • Abstract
    This paper presents an accurate and semi-physical MOSFET substrate current model suitable for analog circuit simulations. The proposed model is valid over a wide range of the electric field present in MOSFET devices. Also, the developed model was implemented into SPICE. Comparisons between measured data and model of drain current (Ids ) and output conductance (gds) were estimated to be more accurate than the reported models previously
  • Keywords
    CMOS analogue integrated circuits; SPICE; circuit analysis computing; integrated circuit modelling; MOSFET substrate current model; SPICE; analog CMOS circuit simulations; precision output conductance model; Analog circuits; CMOS analog integrated circuits; Circuit simulation; Erbium; Impact ionization; MOSFET circuits; Optical scattering; Predictive models; Semiconductor device modeling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1995. ISCAS '95., 1995 IEEE International Symposium on
  • Conference_Location
    Seattle, WA
  • Print_ISBN
    0-7803-2570-2
  • Type

    conf

  • DOI
    10.1109/ISCAS.1995.523710
  • Filename
    523710
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3341461