Title :
A precision output conductance model for analog CMOS circuit simulations
Author :
Seon, Jong Kug ; Yoon, Kwang Sub
Author_Institution :
Dept. of Electr. Eng., Inha Univ., Inchon, South Korea
fDate :
30 Apr-3 May 1995
Abstract :
This paper presents an accurate and semi-physical MOSFET substrate current model suitable for analog circuit simulations. The proposed model is valid over a wide range of the electric field present in MOSFET devices. Also, the developed model was implemented into SPICE. Comparisons between measured data and model of drain current (Ids ) and output conductance (gds) were estimated to be more accurate than the reported models previously
Keywords :
CMOS analogue integrated circuits; SPICE; circuit analysis computing; integrated circuit modelling; MOSFET substrate current model; SPICE; analog CMOS circuit simulations; precision output conductance model; Analog circuits; CMOS analog integrated circuits; Circuit simulation; Erbium; Impact ionization; MOSFET circuits; Optical scattering; Predictive models; Semiconductor device modeling; Voltage;
Conference_Titel :
Circuits and Systems, 1995. ISCAS '95., 1995 IEEE International Symposium on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-2570-2
DOI :
10.1109/ISCAS.1995.523710
