DocumentCode :
3341466
Title :
Learning to appreciate the maxim “less is more”
Author :
Smith, Colin ; Nghia Nguyen ; Liming Ji ; Wook Jun Nam ; Fonash, Stephen
Author_Institution :
Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, USA
fYear :
2013
fDate :
16-21 June 2013
Abstract :
We present the profound performance enhancements experienced when an ultra-thin nanocrystalline silicon (nc-Si) film is utilized in our light and carrier collection management (LCCM) architecture (US Patent 8,294,025). We begin by establishing theoretical short circuit current density (Jsc) values for planar nc-Si devices. Numerical simulation results for the same thicknesses conformally coated over nano-element arrays are then given. Jsc values above 30mA/cm2 are shown for the nc-Si LCCM cells for nc-Si films as thin as 200nm. To attain a Jsc of 35.5mA/cm2, the LCCM solar cell architecture reduces the required nc-Si volume by 98.3% compared to the planar solar cell that would match that performance. The minimization of material while maximizing performance has obvious implications for cost/watt savings. The architectural dimensions that are the product of this study are invaluable for cell manufacturing.
Keywords :
elemental semiconductors; nanostructured materials; semiconductor thin films; short-circuit currents; silicon; solar cell arrays; LCCM solar cell architecture; Si; cell manufacturing; cost-watt savings; light and carrier collection management; material minimization; nanoelement arrays; nc-silicon devices; numerical simulation; theoretical short circuit current density; ultra-thin nanocrystalline silicon film; Computer architecture; Films; Manufacturing; Photovoltaic cells; Photovoltaic systems; Silicon; nanoscale devices; numerical simulation; photovoltaic cells; silicon; thin films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
Type :
conf
DOI :
10.1109/PVSC.2013.6744227
Filename :
6744227
Link To Document :
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