Material characteristics of crystalline Si thin-film solar cells on glass fabricated by diode laser crystallization

Author

Jae Sung Yun ; Jialiang Huang ; Kyung Hun Kim ; Varlamov, Sergey ; Evans, Roger ; Green, Matthew

Author_Institution

Univ. of New South Wales, Kensington, NSW, Australia

fYear

2013

fDate

16-21 June 2013

Abstract

Diode laser crystallization was performed silicon thin film on glass. Large linear grains along the laser scanning direction were formed when the laser scanning speed of 150-1000 mm/min was used. First order □3 twin boundaries were found to be dominating grain boundaries. Pole figure measurement showed very uniform (100) texture can be formed when SiO_x layer capping layer was used. Promising bulk resistivity of the as-crystallized films was resulted. Emitter was formed using spin on diffusion and subsequent RTP Suns V_oc results after emitter formation exhibited n=1 recombination. Hydrogen plasma passivation effectively passivated grain boundaries.

Keywords

crystallisation; elemental semiconductors; passivation; plasma applications; silicon; solar cells; thin film devices; twin boundaries; as-crystallized films; bulk resistivity; crystalline silicon thin-film solar cell-on-glass; diode laser crystallization; emitter formation; grain boundaries; hydrogen plasma passivation; laser scanning direction; laser scanning speed; linear grains; material characteristics; pole figure measurement; silicon oxide layer capping layer; spin-on-diffusion; subsequent RTP Suns; twin boundaries; Crystallization; Films; Glass; Grain boundaries; Photovoltaic cells; Silicon; Sun; crystalline materials; laser crystallization; mobility; photovoltaic cells; semiconductor materials; silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/PVSC.2013.6744229

Filename

6744229