Title :
A thermal dynamical boron getter (pp+ getter) in Fe-contaminated mass production of the boron diffused n+pp+ BSF bifacial silicon solar cells
Author :
Joge, Toshio ; Araki, I. ; Uematsu, Tsuyoshi ; Nakashima, Hiroshi ; Matsukuma, Kunihiro
Author_Institution :
Eng. & Product Div., Hitachi Ltd., Ibaraki, Japan
Abstract :
Thermal dynamical treatments for improving the lifetime of the p base of n+pp+ BSF bifacial silicon solar cells have been demonstrated using iron behavior parameters called pp+ getter. The SIMS for the wafers in mass production showed a precipitated high concentration of the iron region near the surface of the boron diffusion layer, and the phosphorus diffusion layer respectively. A high temperature treatment is supposed to increases iron in the p base by diffusing interstitially from the precipitated region, and low temperature treatment decreases the iron over the solubility diffusing to the precipitated region. So, the last thermal treatment needs a long time and the low temperature enough for improving the lifetime. The simulations and examinations on the changes of the lifetime through the cell process showed good consistency.
Keywords :
boron; carrier lifetime; diffusion; elemental semiconductors; getters; heat treatment; minority carriers; precipitation; secondary ion mass spectra; silicon; solar cells; Fe-contaminated mass production; SIMS; Si:B,P,Fe; boron diffused n+pp+ BSF bifacial silicon solar cells; boron diffusion layer; high temperature treatment; interstitial diffusion; iron behavior parameters; iron region; lifetime; low temperature; low temperature treatment; mass production; p base; phosphorus diffusion layer; pp+ getter; precipitated high concentration; precipitated region; solubility; thermal dynamical boron getter; thermal treatment; wafers; Bellows; Boron; Gettering; Iron; Laboratories; Mass production; Photovoltaic cells; Silicon; Surface treatment; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190504