A study on Cu metallization for crystalline Si solar cells

Author

You, JaeSung ; Kang, Jinmo ; Kim, Donghwan ; Pak, James Jungho ; Kang, Choon Sik

Author_Institution

Sch. of Mater. Sci. & Eng., Seoul Nat. Univ., South Korea

fYear

2002

fDate

19-24 May 2002

Firstpage

277

Lastpage

280

Abstract

Cu metallization for crystalline Si solar cells was investigated with the diffusion barrier of either Ti or Ti/TiN. The resistivity and specific contact resistance change of both Ti(30 nm)/Cu(100 nm) and Ti(30 nm)/TiN(30 nm)/Cu (100 nm) layers for various annealing temperatures were investigated. As the annealing temperature increased, the efficiency of cells increased mainly due to the increase in FF and I_SC, which correlates with R_S of the metal layer. The fabricated solar cells with Ti/TiN/Cu layer generally showed higher efficiencies than those with Ti/Cu, because in Ti/Cu layer Cu diffused through Ti and acted as the deep trap centers in Si and increased R_S.

Keywords

annealing; contact resistance; deep levels; diffusion barriers; electrical resistivity; elemental semiconductors; metallisation; semiconductor device measurement; silicon; solar cells; titanium; titanium compounds; Cu; Cu metallization; Si; Ti-TiN; annealing temperature; cell efficiency; crystalline Si solar cells; deep trap centers; diffusion barrier; resistivity; specific contact resistance; Annealing; Conductivity; Crystallization; Electric resistance; Metallization; Photovoltaic cells; Sputter etching; Temperature; Tin; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE

ISSN

1060-8371

Print_ISBN

0-7803-7471-1

Type

conf

DOI

10.1109/PVSC.2002.1190512

Filename

1190512