Towards intermediate-band solar cells with InAs/AlAsSb quantum dots

Author

Meng Sun ; Simmonds, Paul J. ; Laghumavarapu, Ramesh B. ; Lin, Alexander ; Reyner, C.J. ; Baolai Liang ; Huffaker, D.L.

Author_Institution

Dept. of Electr. Eng., UCLA, Los Angeles, CA, USA

fYear

2013

fDate

16-21 June 2013

Firstpage

3493

Lastpage

3496

Abstract

The effects of GaAs_1-xSb_x thin cladding layers on the structural and optical properties of InAs self-assembled quantum dots (SAQDs) embedded in AlAs_0.56Sb_0.44 barriers were investigated. A cladding layer configuration of a layer of GaAs beneath the SAQDs, and a GaAs_0.95Sb_0.05 capping layer above improves SAQD morphology and enhances photoluminescence intensity. Power-dependent and time-resolved photoluminescence were used to confirm the existence of type-II band alignment. The properties shown by this quantum dot system have great potential for intermediate band solar cell applications.

Keywords

III-V semiconductors; aluminium compounds; antimony compounds; claddings; indium compounds; photoluminescence; semiconductor quantum dots; solar cells; GaAs_0.95Sb_0.05; InAs-AlAsSb; SAQD morphology; capping layer; intermediate-band solar cells; optical properties; photoluminescence intensity; power-dependent photoluminescence; quantum dot system; self-assembled quantum dots; structural properties; thin cladding layers; time-resolved photoluminescence; type-II band alignment; Decision support systems; Electrical engineering; Gallium arsenide; Photovoltaic cells; Physics; Quantum dot lasers; Quantum dots; InAs/AlAsSb SAQDs; Intermediate band solar cells (IBSCs); Type-II band structure;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/PVSC.2013.6744245

Filename

6744245