Title :
Towards intermediate-band solar cells with InAs/AlAsSb quantum dots
Author :
Meng Sun ; Simmonds, Paul J. ; Laghumavarapu, Ramesh B. ; Lin, Alexander ; Reyner, C.J. ; Baolai Liang ; Huffaker, D.L.
Author_Institution :
Dept. of Electr. Eng., UCLA, Los Angeles, CA, USA
Abstract :
The effects of GaAs1-xSbx thin cladding layers on the structural and optical properties of InAs self-assembled quantum dots (SAQDs) embedded in AlAs0.56Sb0.44 barriers were investigated. A cladding layer configuration of a layer of GaAs beneath the SAQDs, and a GaAs0.95Sb0.05 capping layer above improves SAQD morphology and enhances photoluminescence intensity. Power-dependent and time-resolved photoluminescence were used to confirm the existence of type-II band alignment. The properties shown by this quantum dot system have great potential for intermediate band solar cell applications.
Keywords :
III-V semiconductors; aluminium compounds; antimony compounds; claddings; indium compounds; photoluminescence; semiconductor quantum dots; solar cells; GaAs0.95Sb0.05; InAs-AlAsSb; SAQD morphology; capping layer; intermediate-band solar cells; optical properties; photoluminescence intensity; power-dependent photoluminescence; quantum dot system; self-assembled quantum dots; structural properties; thin cladding layers; time-resolved photoluminescence; type-II band alignment; Decision support systems; Electrical engineering; Gallium arsenide; Photovoltaic cells; Physics; Quantum dot lasers; Quantum dots; InAs/AlAsSb SAQDs; Intermediate band solar cells (IBSCs); Type-II band structure;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6744245
