DocumentCode
3341886
Title
Higher efficiency for thin multi crystalline silicon solar cells by improving the rear surface passivation
Author
Tool, C.J.J. ; Manshanden, P. ; Burgers, A.R. ; Weeber, A.W.
Author_Institution
ECN Solar Energy, Petten, Netherlands
fYear
2002
fDate
19-24 May 2002
Firstpage
304
Lastpage
307
Abstract
For wafers thicker than 200 μm, the efficiency of industrial multicrystalline silicon solar cells is independent of wafer thickness. An important efficiency limitation of these thin solar cells is the poor rear surface passivation due to the short minority carrier diffusion length of the aluminium BSF. The most likely reason for the poor quality of the BSF is the poor crystallinity of the BSF due to fast cooling of the cells during metallisation firing. Possible solutions to overcome this limitation are presented.
Keywords
aluminium; carrier lifetime; elemental semiconductors; metallisation; passivation; semiconductor device measurement; silicon; solar cells; 200 micron; Si; Si-Al; aluminium BSF; efficiency; metallisation firing; minority carrier diffusion length; rear surface passivation; thin multi crystalline silicon solar cells; Analysis of variance; Coatings; Crystallization; Etching; Metallization; Passivation; Photovoltaic cells; Semiconductor device modeling; Silicon compounds; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN
1060-8371
Print_ISBN
0-7803-7471-1
Type
conf
DOI
10.1109/PVSC.2002.1190519
Filename
1190519
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