• DocumentCode
    3341886
  • Title

    Higher efficiency for thin multi crystalline silicon solar cells by improving the rear surface passivation

  • Author

    Tool, C.J.J. ; Manshanden, P. ; Burgers, A.R. ; Weeber, A.W.

  • Author_Institution
    ECN Solar Energy, Petten, Netherlands
  • fYear
    2002
  • fDate
    19-24 May 2002
  • Firstpage
    304
  • Lastpage
    307
  • Abstract
    For wafers thicker than 200 μm, the efficiency of industrial multicrystalline silicon solar cells is independent of wafer thickness. An important efficiency limitation of these thin solar cells is the poor rear surface passivation due to the short minority carrier diffusion length of the aluminium BSF. The most likely reason for the poor quality of the BSF is the poor crystallinity of the BSF due to fast cooling of the cells during metallisation firing. Possible solutions to overcome this limitation are presented.
  • Keywords
    aluminium; carrier lifetime; elemental semiconductors; metallisation; passivation; semiconductor device measurement; silicon; solar cells; 200 micron; Si; Si-Al; aluminium BSF; efficiency; metallisation firing; minority carrier diffusion length; rear surface passivation; thin multi crystalline silicon solar cells; Analysis of variance; Coatings; Crystallization; Etching; Metallization; Passivation; Photovoltaic cells; Semiconductor device modeling; Silicon compounds; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
  • ISSN
    1060-8371
  • Print_ISBN
    0-7803-7471-1
  • Type

    conf

  • DOI
    10.1109/PVSC.2002.1190519
  • Filename
    1190519