Ribbon-growth-on-substrate: Progress in high-speed crystalline silicon wafer manufacturing

Author

Schönecker, A. ; Laas, L. ; Gutjahr, A. ; Wyers, P. ; Reinink, A. ; Wiersma, B.

Author_Institution

ECN, Energy Res. Centre of the Netherlands, Petten, Netherlands

fYear

2002

fDate

19-24 May 2002

Firstpage

316

Lastpage

319

Abstract

The ribbon-growth-on-substrate (RGS) silicon wafer manufacturing technology is the most promising highspeed wafer production technique under development at the moment. It has the promise to lead to a manufacturing technology, which allows silicon wafer manufacturing at the 25 MWp/a to 50 MWp/a level. A future development of this technology in the areas, RGS machine prototyping, wafer quality improvement and solar cell process optimization should lead to a commercialization of this technology in 2005. In the following a status of the RGS technology today and the most probable road ahead is outlined.

Keywords

elemental semiconductors; semiconductor device manufacture; silicon; solar cells; RGS machine prototyping; RGS silicon wafer manufacturing technology; Si; high-speed crystalline silicon wafer manufacturing; highspeed wafer production technique; ribbon-growth-on-substrate; solar cell process optimization; wafer quality improvement; Commercialization; Costs; Crystallization; Manufacturing; Optimized production technology; Photovoltaic cells; Prototypes; Silicon; Strontium; Throughput;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE

ISSN

1060-8371

Print_ISBN

0-7803-7471-1

Type

conf

DOI

10.1109/PVSC.2002.1190522

Filename

1190522