• DocumentCode
    3342048
  • Title

    Simulated isobaric annealing

  • Author

    Christie, Phillip ; Loose, Mark D. ; Chernoguzov, Alexander V.

  • Author_Institution
    Dept. of Electr. Eng., Delaware Univ., Newark, DE, USA
  • Volume
    3
  • fYear
    1995
  • fDate
    30 Apr-3 May 1995
  • Firstpage
    1683
  • Abstract
    A simulated annealing algorithm for wire placement is proposed in which annealing is carried out under conditions of constant interconnection pressure rather than constant area. This is achieved by modifying the Metropolis criterion so that changes in the Gibbs free energy of the wires are calculated. This enables the area of the array devoted to wiring to decrease as the average wire length is reduced during the annealing schedule. The definition of interconnection pressure follows naturally from the thermodynamic interpretation of simulated annealing and it is shown to be equivalent to a wiring figure of merit called the channel density. The paper ends by speculating on the use of wire pressure to determine the phase transition temperature between the “gas” and “liquid” state of the system
  • Keywords
    circuit layout CAD; free energy; simulated annealing; Gibbs free energy; Metropolis criterion modification; channel density; circuit layout; constant interconnection pressure; simulated annealing algorithm; simulated isobaric annealing; wire placement; wiring figure of merit; Computed tomography; Entropy; Isobaric; Isothermal processes; Physics; Simulated annealing; Stationary state; Temperature; Wire; Wiring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1995. ISCAS '95., 1995 IEEE International Symposium on
  • Conference_Location
    Seattle, WA
  • Print_ISBN
    0-7803-2570-2
  • Type

    conf

  • DOI
    10.1109/ISCAS.1995.523735
  • Filename
    523735