DocumentCode
3342048
Title
Simulated isobaric annealing
Author
Christie, Phillip ; Loose, Mark D. ; Chernoguzov, Alexander V.
Author_Institution
Dept. of Electr. Eng., Delaware Univ., Newark, DE, USA
Volume
3
fYear
1995
fDate
30 Apr-3 May 1995
Firstpage
1683
Abstract
A simulated annealing algorithm for wire placement is proposed in which annealing is carried out under conditions of constant interconnection pressure rather than constant area. This is achieved by modifying the Metropolis criterion so that changes in the Gibbs free energy of the wires are calculated. This enables the area of the array devoted to wiring to decrease as the average wire length is reduced during the annealing schedule. The definition of interconnection pressure follows naturally from the thermodynamic interpretation of simulated annealing and it is shown to be equivalent to a wiring figure of merit called the channel density. The paper ends by speculating on the use of wire pressure to determine the phase transition temperature between the “gas” and “liquid” state of the system
Keywords
circuit layout CAD; free energy; simulated annealing; Gibbs free energy; Metropolis criterion modification; channel density; circuit layout; constant interconnection pressure; simulated annealing algorithm; simulated isobaric annealing; wire placement; wiring figure of merit; Computed tomography; Entropy; Isobaric; Isothermal processes; Physics; Simulated annealing; Stationary state; Temperature; Wire; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1995. ISCAS '95., 1995 IEEE International Symposium on
Conference_Location
Seattle, WA
Print_ISBN
0-7803-2570-2
Type
conf
DOI
10.1109/ISCAS.1995.523735
Filename
523735
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