Title :
Sensor system with differential arrangement of temperature MOS sensor
Author :
Husak, M. ; Jakovenko, J. ; Boura, A.
Author_Institution :
Dept. of Microelectronics, Czech Tech. Univ., Prague
Abstract :
In this article, an arrangement of a temperature sensor system is presented. The system utilizes temperature dependence of the current through the channel of MOS structure. Differential arrangement of the temperature sensor is designed. The arrangement allows measurement of temperature gradient. Using suitable geometric arrangement it is possible to compute direction from the temperature gradient, i.e. for example angle of air flow over the chip. Integrated structure of temperature sensors on the chip has orthogonal arrangement. Optimal operating modes have been selected for the design. There have been performed simulations of dependence of temperature sensitivity of the transistors as temperature sensor on changes of its basic parameters. Modes of weak and strong inversion of MOS structure operation have been simulated in the design. Optimal setup of operating mode has been selected for the design of integrated temperature matrix. The matrix has been used for the design of a probe for measurement of velocity and direction of the gas (air) flow over the chip. Various arrangements of MOS sensor structures have been designed. CoventorWare and CADENCE software tools have been used for simulation and modeling of sensor properties
Keywords :
MIS devices; matrix algebra; temperature sensors; transistors; CADENCE software tools; CoventorWare software; air flow; geometric arrangement; integrated temperature matrix; orthogonal arrangement; sensor system; temperature MOS sensor; transistor temperature sensitivity; Computational modeling; Fluid flow measurement; Probes; Semiconductor device measurement; Sensor systems; Software tools; Temperature dependence; Temperature measurement; Temperature sensors; Velocity measurement;
Conference_Titel :
Industrial Technology, 2005. ICIT 2005. IEEE International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-9484-4
DOI :
10.1109/ICIT.2005.1600678