DocumentCode :
3342391
Title :
Rapid thermal processing for front and rear contact passivation
Author :
Bowden, S. ; Kim, D.S. ; Honsberg, C. ; Rohatgi, A.
Author_Institution :
Georgia Inst. of Technol., Univ. Center for Excellence in Photovoltaic Res. & Educ., Atlanta, GA, USA
fYear :
2002
fDate :
19-24 May 2002
Firstpage :
410
Lastpage :
413
Abstract :
Rapid firing processes are well known to allow improvements in solar cell contacts, particularly for the rear contact. Previous results characterizing the quality of a rear aluminum-alloyed back surface field have measured the effective surface recombination velocity, which depends not only on the material parameters of the back surface field, but also on the base doping. This paper shows that the determination of the recombination current density in the back surface field via photoconductance measurements is an accurate technique to measure the back surface field, independent of the base resistivity. Results show that fast firing conditions give the lowest recombination, but that the firing conditions can be altered substantially while still allowing high open circuit voltages.
Keywords :
aluminium; elemental semiconductors; passivation; photoconductivity; rapid thermal processing; semiconductor device measurement; silicon; solar cells; Si-Al; aluminum-alloyed back surface; back surface field; contact passivation; open circuit voltage; photoconductance; rapid firing processes; rapid thermal processing; rear contact; recombination current density; solar cell contacts; Current density; Current measurement; Density measurement; Doping; Firing; Passivation; Photoconducting materials; Photovoltaic cells; Rapid thermal processing; Velocity measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN :
1060-8371
Print_ISBN :
0-7803-7471-1
Type :
conf
DOI :
10.1109/PVSC.2002.1190546
Filename :
1190546
Link To Document :
بازگشت