Title :
The heavily intermixed In2S3/Cu(In, Ga)Se2 interface as Revealed by photoelectron and soft x-ray emission spectroscopy
Author :
Bar, M. ; Barreau, N. ; Couzinie-Devy, F. ; Felix, R. ; Klaer, J. ; Pookpanratana, S. ; Blum, M. ; Zhang, Ye ; Denlinger, J.D. ; Yang, Weiguo ; Wilks, R.G. ; Weinhardt, L. ; Schock, H.-W. ; Kessler, John ; Heske, C.
Author_Institution :
Solar Energy Res., Helmholtz-Zentrum Berlin fur Mater. und Energie GmbH, Berlin, Germany
Abstract :
We report on the characterization of the chemical and electronic interface structure of the heavily intermixed In2S3/Cu(In, Ga)Se2 (CIGSe) interface. Discussing our findings inferred from direct and inverse photoemission as well as soft x-ray emission spectroscopy, we particularly focus on the impact of the interfacial intermixing/interdiffusion processes on the electronic band alignment at the interface. Furthermore, we present deposition-temperature-dependent data on the (In, Al)2S3/CIGSe interface. We find that the chemical processes at the buffer/absorber interface are thermally activated with a threshold temperature of approximately 200°C.
Keywords :
X-ray spectroscopy; copper compounds; gallium compounds; indium compounds; photoelectron spectroscopy; solar cells; sulphur compounds; thin film devices; In2S3-Cu(In-Ga)Se2; chalcopyrite thin-film solar cells; deposition-temperature-dependent data; direct photoemission; electronic band alignment; interfacial intermixing-interdiffusion processes; inverse photoemission; photoelectron; soft x-ray emission spectroscopy; Buffer layers; Chemicals; Indium; Photovoltaic cells; Spectroscopy; Surface treatment; Uninterruptible power systems; In2S3 buffer layer; chalcopyrite thin-film solar cells; chemical and electronic interface structure;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6744280
