• DocumentCode
    3342705
  • Title

    Tunneling spectroscopy of band edge structures of Bi2Te3 and Sb2Te3

  • Author

    Funagai, K. ; Miyahura, Y. ; Ozaki, H. ; Kulbachinskii, V.A.

  • Author_Institution
    Dept. of Electr. Eng., Waseda Univ., Tokyo, Japan
  • fYear
    1996
  • fDate
    26-29 March 1996
  • Firstpage
    408
  • Lastpage
    411
  • Abstract
    Tunneling study was made on Bi/sub 2/Te/sub 3/ and Sb/sub 2/Te/sub 3/ at 4.2 K, 77 K and 295 K. Energy gap of Bi/sub 2/Te/sub 3/ was estimated to be 0.25 eV, 0.22 eV and 0.20 eV at 4.2 K, 77 K and 295 K, respectively.
  • Keywords
    MIS structures; antimony compounds; bismuth compounds; energy gap; semiconductor materials; thermoelectricity; tunnelling; 0.2 eV; 0.22 eV; 0.25 eV; 295 K; 4.2 K; 77 K; Bi/sub 2/Te/sub 3/; Sb/sub 2/Te/sub 3/; band edge structures; energy gap; metal-insulator-semiconductor junction; thermoelectrics; tunneling; Bismuth; Crystalline materials; Crystals; Energy measurement; Insulation; Spectroscopy; Tellurium; Temperature dependence; Thermoelectricity; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 1996., Fifteenth International Conference on
  • Conference_Location
    Pasadena, CA, USA
  • Print_ISBN
    0-7803-3221-0
  • Type

    conf

  • DOI
    10.1109/ICT.1996.553516
  • Filename
    553516
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3342705