Title :
Preparation of highly effective p-Bi0.5Sb1.5Te3 and n-Bi2Te2.7Se0.3 films
Author :
Stölzer, M. ; Stordeur, M. ; Stark, I.
Author_Institution :
Martin-Luther-Univ., Halle-Wittenberg, Germany
Abstract :
Bi/sub 0.5/Sb/sub 1.5/Te/sub 3/ and B2/sub i/Te/sub 2.7/Se/sub 0.3/ films were flash-evaporated onto oxidized aluminium and Kapton foil substrates. The films were characterized by SEM, EDX and electrical transport measurements (electrical conductivity, Hall coefficient and thermopower in the range 85...375 K). Highly effective films grown on Kapton show a (1 0 5) texture whereas films on Al/Al/sub 2/O/sub 3/ are (0 0 n) texturized. With an optimal amount of excess Te in the evaporant, after an annealing procedure a power factor of 4E-3 W K(E-2) m(E-1) at 300 K was reached.
Keywords :
Hall effect; X-ray chemical analysis; annealing; bismuth compounds; electrical conductivity; scanning electron microscopy; semiconductor thin films; thermoelectric power; vapour deposited coatings; 85 to 375 K; Bi/sub 0.5/Sb/sub 1.5/Te/sub 3/; Bi/sub 2/Te/sub 2.7/Se/sub 0.3/; EDX; Hall coefficient; SEM; annealing; electrical conductivity; electrical transport; flash-evaporated; n-Bi/sub 2/Te/sub 2.7/Se/sub 0.3/ film; p-Bi/sub 0.5/Sb/sub 1.5/Te/sub 3/ film; power factor; thermopower; Bismuth; Composite materials; Conducting materials; Semiconductor films; Substrates; Tellurium; Temperature; Thermal conductivity; Thermal expansion; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 1996., Fifteenth International Conference on
Conference_Location :
Pasadena, CA, USA
Print_ISBN :
0-7803-3221-0
DOI :
10.1109/ICT.1996.553524
