DocumentCode
3342891
Title
Experimental study of the effect of quantum-well structures on the thermoelectric figure of merit
Author
Hicks, L.D. ; Harman, T.C. ; Sun, X. ; Dresselhaus, M.S.
Author_Institution
Dept. of Phys., MIT, Lexington, MA, USA
fYear
1996
fDate
26-29 March 1996
Firstpage
450
Lastpage
453
Abstract
Experimental investigations have been performed on the thermoelectric properties on the multiple-quantum-well structures of PbTe/Pb/sub 1-x/Eu/sub x/Te grown by molecular beam epitaxy. Our results are found to be consistent with theoretical predictions and indicate that an increase in Z over bulk values may be possible through quantum confinement effects using quantum-well structures.
Keywords
IV-VI semiconductors; europium compounds; lead compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor heterojunctions; semiconductor quantum wells; thermoelectric power; PbTe-PbEuTe; PbTe/Pb/sub 1-x/Eu/sub x/Te; molecular beam epitaxy; quantum confinement effects; quantum-well structures; thermoelectric figure of merit; Carrier confinement; Electrons; Magneto electrical resistivity imaging technique; Molecular beam epitaxial growth; Quantum well devices; Quantum wells; Testing; Thermal conductivity; Thermoelectricity; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 1996., Fifteenth International Conference on
Conference_Location
Pasadena, CA, USA
Print_ISBN
0-7803-3221-0
Type
conf
DOI
10.1109/ICT.1996.553525
Filename
553525
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