Title :
Effect of surface orientation on the growth and properties of Cu(In,Ga)Se2
Author :
Liao, Dongxiang ; Rockett, Angus
Author_Institution :
Dept. of Mater. Sci. & Eng., Illinois Univ., Urbana, IL, USA
Abstract :
The effects of surface orientation on growth from the vapor phase and properties of Cu(In,Ga)Se2 on GaAs [001], [111]B, [111]A, and [110] are discussed. Faceting was observed on CIGS on GaAs [110], resulting in two polar [112] facet types with strikingly different surface morphologies. The [112]s. surface is assigned as the growth front, while growth on {112}Metal planes is relatively slow. A study of CIGS on GaAs [111]A and [111]B substrates was carried out and we present a growth model based on the results. The possible surface reconstructions, chemical compositions and the electronic structures of the two [112] surfaces have been investigated and are discussed in the context of CdS/CIGS interfaces and device performances.
Keywords :
copper compounds; crystal faces; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor growth; solar cells; sputter deposition; surface composition; surface morphology; surface reconstruction; surface states; ternary semiconductors; vapour phase epitaxial growth; CdS/CIGS interfaces; Cu(In,Ga)Se2; Cu(InGa)Se2; GaAs; GaAs [001]; GaAs [110]; GaAs [111]A; GaAs [111]B; chemical compositions; device performances; electronic structures; faceting; hybrid sputtering evaporation technique; properties; solar cells; surface morphologies; surface orientation; surface reconstructions; two polar [112] facet types; vapor phase growth; Atomic force microscopy; Backscatter; Gallium arsenide; Photovoltaic cells; Photovoltaic systems; Scanning electron microscopy; Substrates; Surface morphology; Surface reconstruction; X-ray diffraction;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190615
