• DocumentCode
    3343051
  • Title

    High-efficiency polycrystalline CdTe thin-film solar cells with an oxygenated amorphous cds (a-CdS:O) window layer

  • Author

    Wu, X. ; Dhere, R.G. ; Yan, Y. ; Romero, M.J. ; Zhang, Y. ; Zhou, J. ; DeHart, C. ; Duda, A. ; Perkins, C. ; To, B.

  • Author_Institution
    Nat. Renewable Energy Lab., Golden, CO, USA
  • fYear
    2002
  • fDate
    19-24 May 2002
  • Firstpage
    531
  • Lastpage
    534
  • Abstract
    In the conventional CdS/CdTe device structure, the poly-CdS window layer has a bandgap of ∼2.4 eV, which causes absorption in the short-wavelength region. Higher short-circuit current densities (Jsc) can be achieved by reducing the CdS thickness, but this can adversely impact device open-circuit voltage (Voc) and fill factor (FF). Also, poly-CdS film has about 10% lattice mismatch related to the CdTe film, which limits the improvement of device Voc and FF. In this paper, we report a novel window material: oxygenated amorphous CdS film (a-CdS:O) prepared at room temperature by rf sputtering. The a-CdS:O film has a higher optical bandgap (2.5-3.1 eV) than the poly-CdS film and an amorphous structure. The preliminary device results have demonstrated that Jsc of the CdTe device can be greatly improved while maintaining higher Voc and FF. We have fabricated a CdTe cell demonstrating an NREL-confirmed Jsc of 25.85 mA/cm2 and a total-area efficiency of 15.4%.
  • Keywords
    II-VI semiconductors; Raman spectra; amorphous semiconductors; cadmium compounds; energy gap; noncrystalline structure; optical windows; oxygen; photoconductivity; semiconductor thin films; solar cells; sputtered coatings; 15.4 percent; 2.5 to 3.1 eV; CdS thickness; CdS-CdTe; CdS:O; CdTe; a-CdS:O; absorption; amorphous structure; bandgap; conventional CdS/CdTe device structure; device open-circuit voltage; fill factor; high-efficiency polycrystalline CdTe thin-film solar cells; higher optical bandgap; higher short-circuit current densities; lattice mismatch; oxygenated amorphous CdS window layer; poly-CdS film; poly-CdS window layer; rf sputtering; room temperature; short-wavelength region; total-area efficiency; Absorption; Amorphous materials; Current density; Lattices; Optical films; Optical materials; Photonic band gap; Photovoltaic cells; Transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
  • ISSN
    1060-8371
  • Print_ISBN
    0-7803-7471-1
  • Type

    conf

  • DOI
    10.1109/PVSC.2002.1190619
  • Filename
    1190619