Title :
Formation of p+ CdTe contact with Cu2Te electrode and its stability in CdTe cells
Author :
Yun, Jae Ho ; Kim, Ki Hwan ; Lee, Doo Youl ; Ahn, Byung Tae ; Ohno, Timothy R.
Author_Institution :
Dept. of Mater. Sci. & Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Abstract :
Cu2Te electrode was utilized as a Cu source to form p+-CdTe and its stability in CdTe cells has been investigated. An amorphous interlayer was found at the CdTe/Cu2Te interface by depositing Cu2Te at room temperature and it was crystallized by annealing at 200°C, enhancing the growth of hexagonal phase compared to orthorhombic phase. A good p+ ohmic contact was formed at 180°C annealing and the best efficiency was obtained at 200°C. The cell efficiency was degraded under forward bias and it was either improved or recovered both under reverse bias and by additional annealing, The cell with thinner CdTe layer was degraded faster and more severely affected by bias stress.
Keywords :
II-VI semiconductors; annealing; cadmium compounds; copper compounds; interface structure; noncrystalline structure; ohmic contacts; solar cells; 180 to 200 degC; CdTe cells; CdTe-Cu2Te; CdTe/Cu2Te interface; Cu source; Cu2Te electrode; amorphous interlayer; annealing; best efficiency; bias stress; forward bias; hexagonal phase; orthorhombic phase; p+ CdTe contact formation; reverse bias; room temperature; stability; thinner CdTe layer; Amorphous materials; Annealing; Crystallization; Degradation; Electrodes; Ohmic contacts; Stability; Stress; Tellurium; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190622
